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DMN2005UFG-13 vs DMN2005UFG-7 vs DMN2005UFG

 
PartNumberDMN2005UFG-13DMN2005UFG-7DMN2005UFG
DescriptionMOSFET 20V N-Ch Enh Mode FET 12Vgss 1.05WMOSFET 20V N-Ch Enh FET 6495pF 66.8nC
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI3333-8PowerDI3333-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage20 V20 V-
Id Continuous Drain Current18.1 A18.1 A-
Rds On Drain Source Resistance8.7 mOhms8.7 mOhms-
Vgs th Gate Source Threshold Voltage700 mV700 mV-
Vgs Gate Source Voltage12 V12 V-
Qg Gate Charge68.8 nC68.8 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation2.27 W2.27 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMN2005DMN2005DMN2005
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time38 ns38 ns38 ns
Product TypeMOSFETMOSFET-
Rise Time25.7 ns25.7 ns25.7 ns
Factory Pack Quantity30002000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time114 ns114 ns114 ns
Typical Turn On Delay Time12.4 ns12.4 ns12.4 ns
Unit Weight0.002540 oz0.002540 oz0.002540 oz
Package Case--PowerDI-3333
Pd Power Dissipation--2.27 W
Vgs Gate Source Voltage--12 V
Id Continuous Drain Current--18.1 A
Vds Drain Source Breakdown Voltage--20 V
Vgs th Gate Source Threshold Voltage--0.7 V
Rds On Drain Source Resistance--8.7 mOhms
Qg Gate Charge--68.8 nC
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