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| PartNumber | DMN1025UFDB-7 | DMN1023UCB4-7 | DMN1025UFDB |
| Description | MOSFET Dual N-Ch Enh FET 12V 10Vgs 1.7W | MOSFET MOSFET BVDSS: 8V-24V | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | U-DFN2020-B-6 | U-WLB1010-4 | - |
| Number of Channels | 2 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 12 V | 12 V | - |
| Id Continuous Drain Current | 6.9 A | 5.1 A | - |
| Rds On Drain Source Resistance | 25 mOhms, 25 mOhms | 23 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 0.4 V | - |
| Vgs Gate Source Voltage | 10 V | 8 V | - |
| Qg Gate Charge | 12.6 nC | 3 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.7 W | 1.2 W | - |
| Configuration | Dual | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMN1025 | - | - |
| Transistor Type | 2 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | - | 8 S | - |
| Fall Time | 2.8 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9.3 ns | 6 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 17.2 ns | 18 ns | - |
| Typical Turn On Delay Time | 3 ns | 3 ns | - |