DME501010R vs DME500 vs DME50101

 
PartNumberDME501010RDME500DME50101
DescriptionBipolar Transistors - BJT COMPOSITE TRANSISTOR FLT LD 2.0x2.1mmRF Bipolar Transistors Bipolar/LDMOS Transistor
ManufacturerPanasonicMicrochipPanasonic Electronic Components
Product CategoryBipolar Transistors - BJTRF Bipolar TransistorsTransistors (BJT) - Arrays
RoHSYN-
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSMini-5--
Transistor PolarityNPN, PNP-NPN PNP
ConfigurationDual-Dual
Collector Emitter Voltage VCEO Max- 50 V--
Gain Bandwidth Product fT150 MHz-150 MHz
Maximum Operating Temperature+ 150 C-+ 150 C
PackagingReel-Digi-ReelR Alternate Packaging
BrandPanasonicMicrochip / Microsemi-
Continuous Collector Current- 100 mA-- 100 mA
DC Collector/Base Gain hfe Min210--
Product TypeBJTs - Bipolar TransistorsRF Bipolar Transistors-
Factory Pack Quantity30001-
SubcategoryTransistorsTransistors-
Technology-Si-
Series---
Package Case--5-SMD, Flat Leads
Mounting Type--Surface Mount
Supplier Device Package--SMini5-F3-B
Power Max--150mW
Transistor Type--NPN, PNP (Emitter Coupled)
Current Collector Ic Max--100mA
Voltage Collector Emitter Breakdown Max--50V
DC Current Gain hFE Min Ic Vce--210 @ 2mA, 10V
Vce Saturation Max Ib Ic--300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Current Collector Cutoff Max--100μA
Frequency Transition--150MHz
Collector Emitter Voltage VCEO Max--- 50 V
DC Collector Base Gain hfe Min--210
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