DCP69-16-13 vs DCP69-13 vs DCP69-16

 
PartNumberDCP69-16-13DCP69-13DCP69-16
DescriptionBipolar Transistors - BJT 1W -20VBipolar Transistors - BJT 1W -20V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single
RoHSYY-
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-223-4SOT-223-4-
Transistor PolarityPNPPNPPNP
ConfigurationSingleSingleSingle
Collector Emitter Voltage VCEO Max- 20 V- 20 V-
Collector Base Voltage VCBO- 25 V- 25 V-
Emitter Base Voltage VEBO- 5 V- 5 V-
Collector Emitter Saturation Voltage- 500 mV- 500 mV- 500 mV
Maximum DC Collector Current- 2 A- 2 A- 2 A
Gain Bandwidth Product fT200 MHz200 MHz200 MHz
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
SeriesDCP69DCP69DCP69
Height1.6 mm1.6 mm-
Length6.5 mm6.5 mm-
PackagingReelReelDigi-ReelR Alternate Packaging
Width3.5 mm3.5 mm-
BrandDiodes IncorporatedDiodes Incorporated-
DC Collector/Base Gain hfe Min50 at - 5 mA, - 10 V50 at - 5 mA, - 10 V-
Pd Power Dissipation1000 mW1000 mW-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity25002500-
SubcategoryTransistorsTransistors-
Unit Weight0.003951 oz0.003951 oz0.000282 oz
Package Case--TO-261-4, TO-261AA
Mounting Type--Surface Mount
Supplier Device Package--SOT-223
Power Max--1W
Transistor Type--PNP
Current Collector Ic Max--1A
Voltage Collector Emitter Breakdown Max--20V
DC Current Gain hFE Min Ic Vce--100 @ 500mA, 1V
Vce Saturation Max Ib Ic--500mV @ 100mA, 1A
Current Collector Cutoff Max--100nA (ICBO)
Frequency Transition--200MHz
Pd Power Dissipation--1000 mW
Collector Emitter Voltage VCEO Max--- 20 V
Collector Base Voltage VCBO--- 25 V
Emitter Base Voltage VEBO--- 5 V
DC Collector Base Gain hfe Min--50 at - 5 mA - 10 V
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