CY7C1425KV18-300BZXC vs CY7C1425KV18-300BZC vs CY7C1425KV18-333BZC

 
PartNumberCY7C1425KV18-300BZXCCY7C1425KV18-300BZCCY7C1425KV18-333BZC
DescriptionSRAM 36MB (4Mx9) 1.8v 300MHz QDR II SRAMSRAM 36MB (4Mx9) 1.8v 300MHz QDR II SRAMSRAM 36MB (4Mx9) 1.8v 333MHz QDR II SRAM
ManufacturerCypress SemiconductorCypress SemiconductorCypress Semiconductor
Product CategorySRAMSRAMSRAM
RoHSYNN
Memory Size36 Mbit36 Mbit36 Mbit
Organization4 M x 94 M x 94 M x 9
Access Time-0.45 ns1 ms
Maximum Clock Frequency300 MHz300 MHz333 MHz
Interface TypeParallelParallelParallel
Supply Voltage Max1.9 V1.9 V1.9 V
Supply Voltage Min1.7 V1.7 V1.7 V
Supply Current Max680 mA680 mA750 mA
Minimum Operating Temperature0 C0 C0 C
Maximum Operating Temperature+ 70 C+ 70 C+ 70 C
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseFBGA-165FBGA-165FBGA-165
PackagingTrayTrayTray
Memory TypeVolatileQDRQDR
SeriesCY7C1425KV18CY7C1425KV18CY7C1425KV18
TypeSynchronousSynchronousSynchronous
BrandCypress SemiconductorCypress SemiconductorCypress Semiconductor
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity136136136
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
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