CSD17313Q2Q1 vs CSD17313Q2Q1T vs CSD17313Q2Q1-1

 
PartNumberCSD17313Q2Q1CSD17313Q2Q1TCSD17313Q2Q1-1
DescriptionMOSFET Auto 30-V N-Ch NexFET Pwr MOSFETMOSFET Automotive 30-V N-Channel NexFET™ Power MOSFET 6-WSON -55 to 150
ManufacturerTexas InstrumentsTexas Instruments-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseWSON-FET-6WSON-FET-6-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current5 A5 A-
Rds On Drain Source Resistance32 mOhms24 mOhms-
Vgs th Gate Source Threshold Voltage1.3 V1.3 V-
Vgs Gate Source Voltage10 V10 V, 8 V-
Qg Gate Charge2.1 nC2.1 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.3 W17 W-
ConfigurationSingleSingle-
QualificationAEC-Q101AEC-Q101-
TradenameNexFETNexFET-
PackagingReelReel-
Height0.75 mm0.75 mm-
Length2 mm2 mm-
SeriesCSD17313Q2Q1CSD17313Q2Q1-
Transistor Type1 N-Channel1 N-Channel-
Width2 mm2 mm-
BrandTexas InstrumentsTexas Instruments-
Forward Transconductance Min16 S16 S-
Fall Time1.3 ns1.3 ns-
Product TypeMOSFETMOSFET-
Rise Time3.9 ns3.9 ns-
Factory Pack Quantity3000250-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time4.2 ns4.2 ns-
Typical Turn On Delay Time2.8 ns2.8 ns-
Unit Weight0.000307 oz--
Channel Mode-Enhancement-
Top