CMUDM7001 TR vs CMUDM7001 vs CMUDM7004

 
PartNumberCMUDM7001 TRCMUDM7001CMUDM7004
DescriptionMOSFET N-Ch Enh Mode FET 20Vds 10Vgs 250mWTrans MOSFET N-CH 30V 0.45A 3-Pin SOT-523
ManufacturerCentral Semiconductor-Central Semiconductor
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSOT-523--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage20 V--
Id Continuous Drain Current100 mA--
Rds On Drain Source Resistance900 mOhms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage10 V--
Qg Gate Charge566 pC--
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation250 mW--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
TradenameUltraMini--
PackagingReel-Reel
SeriesCMUDM7-CMUDM7004
Transistor Type1 N-Channel-1 N-Channel
BrandCentral Semiconductor--
Product TypeMOSFET--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time75 ns-75 ns
Typical Turn On Delay Time50 ns-20 ns
Part # AliasesCMUDM7001 PBFREE TR--
Unit Weight0.000071 oz-0.000071 oz
Package Case--SOT-523-3
Pd Power Dissipation--250 mW
Vgs Gate Source Voltage--8 V
Id Continuous Drain Current--450 mA
Vds Drain Source Breakdown Voltage--30 V
Vgs th Gate Source Threshold Voltage--1 V
Rds On Drain Source Resistance--550 mOhms
Qg Gate Charge--0.792 nC
Forward Transconductance Min--200 mS
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