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CMPT930 TR vs CMPT930 TR TIN/LEAD vs CMPT930

 
PartNumberCMPT930 TRCMPT930 TR TIN/LEADCMPT930
DescriptionBipolar Transistors - BJT NPN 45Vcbo 45Vceo 5.0Vcebo 350mWBipolar Transistors - BJT NPN 45Vcbo 45Vceo 5.0Vcebo 350mW
ManufacturerCentral SemiconductorCentral SemiconductorCentral Semiconductor Corp
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased
RoHSYN-
Package / CaseSOT-23SOT-23-3-
SeriesCMPT930CMPT9CMPT930
PackagingReelReelDigi-ReelR Alternate Packaging
BrandCentral SemiconductorCentral Semiconductor-
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar Transistors-
Factory Pack Quantity30003000-
SubcategoryTransistorsTransistors-
Part # AliasesCMPT930 PBFREE TR--
Technology-Si-
Mounting Style-SMD/SMT-
Transistor Polarity-NPN-
Configuration-Single-
Collector Emitter Voltage VCEO Max-45 V-
Collector Base Voltage VCBO-45 V-
Emitter Base Voltage VEBO-5 V-
Collector Emitter Saturation Voltage-1 V-
Gain Bandwidth Product fT-30 MHz-
Minimum Operating Temperature-- 65 C-
Maximum Operating Temperature-+ 150 C-
DC Current Gain hFE Max-300 at 10 uA, 5 V-
Continuous Collector Current-30 mA-
DC Collector/Base Gain hfe Min-100 at 10 uA, 5 V-
Pd Power Dissipation-350 mW-
Package Case--TO-236-3, SC-59, SOT-23-3
Mounting Type--Surface Mount
Supplier Device Package--SOT-23
Power Max--350mW
Transistor Type--NPN
Current Collector Ic Max--30mA
Voltage Collector Emitter Breakdown Max--45V
DC Current Gain hFE Min Ic Vce--100 @ 10μA, 5V
Vce Saturation Max Ib Ic--1V @ 500μA, 10mA
Current Collector Cutoff Max--10nA
Frequency Transition--30MHz
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