CGHV35150F vs CGHV35150-TB vs CGHV35150

 
PartNumberCGHV35150FCGHV35150-TBCGHV35150
DescriptionRF JFET Transistors GaN HEMT 2.9-3.5GHz, 150 WattRF Development Tools Test Board without GaN HEMT
ManufacturerCree, Inc.Cree, Inc.-
Product CategoryRF JFET TransistorsRF Development Tools-
RoHSYN-
Transistor TypeHEMT--
TechnologyGaN--
Gain15 dB--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage120 V--
Vgs Gate Source Breakdown Voltage- 10 V to 2 V--
Id Continuous Drain Current4.5 A--
Output Power45 W--
Maximum Drain Gate Voltage---
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation---
Mounting StyleScrew Mount--
Package / Case440193--
PackagingTrayBulk-
Application---
ConfigurationSingle--
Height4.19 mm--
Length20.46 mm--
Operating Frequency2 GHz to 4 GHz--
Operating Temperature Range---
ProductGaN HEMTDemonstration Boards-
Width5.97 mm--
BrandWolfspeed / CreeWolfspeed / Cree-
Forward Transconductance Min---
Gate Source Cutoff Voltage---
Class---
Development KitCGH40035F-TB--
Fall Time---
NF Noise Figure---
P1dB Compression Point---
Product TypeRF JFET TransistorsRF Development Tools-
Rds On Drain Source Resistance---
Rise Time---
Factory Pack Quantity1202-
SubcategoryTransistorsDevelopment Tools-
Typical Turn Off Delay Time---
Vgs th Gate Source Threshold Voltage- 3 V--
Type-RF Transistors-
Tool Is For Evaluation Of-CGHV35150-
Frequency-2.9 GHz to 3.5 GHz-
Operating Supply Voltage---
Description/Function-Demonstration board for CGHV35150-
Dimensions---
Interface Type---
For Use With-CGHV35150-
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