CBCX68 TR vs CBCX68 vs CBCX68-16

 
PartNumberCBCX68 TRCBCX68CBCX68-16
DescriptionBipolar Transistors - BJT 25V 2A NPN
ManufacturerCentral SemiconductorCentral Semiconductor Corp-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-89--
Transistor PolarityNPNNPN-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max20 V--
Collector Base Voltage VCBO25 V--
Emitter Base Voltage VEBO5 V--
Maximum DC Collector Current1 A1 A-
Gain Bandwidth Product fT65 MHz65 MHz-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesCBCX6CBCP6-
Height1.7 mm--
Length4.7 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width2.7 mm--
BrandCentral Semiconductor--
DC Collector/Base Gain hfe Min50--
Pd Power Dissipation1200 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # AliasesCBCX68 PBFREE TR--
Unit Weight0.004603 oz0.004603 oz-
Package Case-TO-243AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-89-
Power Max-1.2W-
Transistor Type-NPN-
Current Collector Ic Max-1A-
Voltage Collector Emitter Breakdown Max-20V-
DC Current Gain hFE Min Ic Vce-85 @ 500mA, 1V-
Vce Saturation Max Ib Ic-500mV @ 100mA, 1A-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-65MHz-
Pd Power Dissipation-1200 mW-
Collector Emitter Voltage VCEO Max-20 V-
Collector Base Voltage VCBO-25 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-50-
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