BUL1203E vs BUL1203E(E) vs BUL1203EFP

 
PartNumberBUL1203EBUL1203E(E)BUL1203EFP
DescriptionBipolar Transistors - BJT N Ch 75V 3.5m 120A Pwr MOSFETBipolar Transistors - BJT PWR BIP/S.SIGNAL
ManufacturerSTMicroelectronics-STMICROELECTRONICS
Product CategoryBipolar Transistors - BJT-Transistors - Bipolar (BJT) - RF
RoHSY--
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-220-3--
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max550 V--
Collector Base Voltage VCBO1.2 kV--
Emitter Base Voltage VEBO9 V--
Maximum DC Collector Current5 A-5 A
Minimum Operating Temperature- 65 C-- 65 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesBUL1203E-1000V Transistors
Height9.15 mm (Max)--
Length10.4 mm (Max)--
PackagingTube-Tube
Width4.6 mm (Max)--
BrandSTMicroelectronics--
Pd Power Dissipation100000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Unit Weight0.081130 oz-0.081130 oz
Package Case--TO-220-3 FP
Pd Power Dissipation--36000 mW
Collector Emitter Voltage VCEO Max--550 V
Collector Base Voltage VCBO--1.2 kV
Emitter Base Voltage VEBO--9 V
DC Collector Base Gain hfe Min--10
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