BUJD203A,127 vs BUJD203-AD vs BUJD203A

 
PartNumberBUJD203A,127BUJD203-ADBUJD203A
DescriptionBipolar Transistors - BJT NPN 425 V 4 A
ManufacturerWeEn Semiconductors--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220AB-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max425 V--
Collector Base Voltage VCBO850 V--
Collector Emitter Saturation Voltage0.29 V--
Maximum DC Collector Current4 A--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max32--
BrandWeEn Semiconductors--
Continuous Collector Current4 A--
DC Collector/Base Gain hfe Min10--
Pd Power Dissipation80 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # Aliases934064983127--
Unit Weight0.211644 oz--
Top