BUJ105A,127 vs BUJ105A vs BUJ105AB

 
PartNumberBUJ105A,127BUJ105ABUJ105AB
DescriptionBipolar Transistors - BJT Trans GP BJT NPN 400V 8A 3-Pin(3+Tab)Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
ManufacturerWeEn Semiconductors--
Product CategoryBipolar Transistors - BJT--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220AB-3--
Transistor PolarityNPN--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max400 V--
Collector Base Voltage VCBO700 V--
Collector Emitter Saturation Voltage0.3 V--
Maximum DC Collector Current8 A--
Maximum Operating Temperature+ 150 C--
DC Current Gain hFE Max36--
Height9.4 mm--
Length10.3 mm--
Width4.7 mm--
BrandWeEn Semiconductors--
DC Collector/Base Gain hfe Min10--
Pd Power Dissipation80 W--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity1000--
SubcategoryTransistors--
Part # Aliases934055527127--
Unit Weight0.211644 oz--
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