PartNumber | BSS84DW-7-F | BSS84DW-7 | BSS84DW-7-F-CUT TAPE |
Description | MOSFET -50V 200mW | MOSFET -50V 200mW | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | N | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-363-6 | SOT-363-6 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | P-Channel | P-Channel | - |
Vds Drain Source Breakdown Voltage | 50 V | 50 V | - |
Id Continuous Drain Current | 130 mA | 130 mA | - |
Rds On Drain Source Resistance | 10 Ohms | 6 Ohms | - |
Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
Vgs Gate Source Voltage | 5 V | 20 V | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 300 mW | 300 mW | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Height | 1 mm | 1 mm | - |
Length | 2.2 mm | 2.2 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Series | BSS84 | BSS84DW | - |
Transistor Type | 2 P-Channel | 2 P-Channel | - |
Type | Enhancement Mode Field Effect Transistor | - | - |
Width | 1.35 mm | 1.35 mm | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Forward Transconductance Min | 0.05 S | 0.05 S | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 18 ns | 18 ns | - |
Typical Turn On Delay Time | 10 ns | 10 ns | - |
Unit Weight | 0.000212 oz | 0.000212 oz | - |