 | |  | |
| PartNumber | BSS215PH6327XTSA1 | BSS215PH6327XT | BSS215P H6327 |
| Description | MOSFET P-Ch -20V -1.5A SOT-23-3 | MOSFET P-Ch -20V -1.5A SOT-23-3 | - Bulk (Alt: BSS215P H6327) |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V | - |
| Id Continuous Drain Current | 1.5 A | 1.5 A | - |
| Rds On Drain Source Resistance | 105 mOhms | 105 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 12 V | 12 V | - |
| Qg Gate Charge | - 3.6 nC | - 3.6 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 2.9 mm | 2.9 mm | - |
| Series | BSS215 | BSS215 | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 1.3 mm | 1.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 4.5 S | 4.5 S | - |
| Fall Time | 14 ns | 14 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9.7 ns | 9.7 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 14.5 ns | 14.5 ns | - |
| Typical Turn On Delay Time | 6.7 ns | 6.7 ns | - |
| Part # Aliases | BSS215P BSS215PH6327XT H6327 SP000928938 | BSS215P BSS215PH6327XTSA1 H6327 SP000928938 | - |
| Unit Weight | 0.001164 oz | 0.000282 oz | - |