PartNumber | BSP320SH6433XTMA1 | BSP320S H6327 | BSP320SH6327XTSA1 |
Description | MOSFET SIPMOS Sm-Signal 60V 120mOhm 2.9A | MOSFET N-Ch 60V 2.9A SOT-223-3 | MOSFET N-Ch 60V 2.9A SOT-223-3 |
Manufacturer | Infineon | Infineon | Infineon |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-223-4 | SOT-223-4 | SOT-223-4 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
Id Continuous Drain Current | 2.9 A | 2.9 A | 2.9 A |
Rds On Drain Source Resistance | 120 mOhms | 120 mOhms | 120 mOhms |
Vgs th Gate Source Threshold Voltage | 2.1 V | 2.1 V | 2.1 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 9.7 nC | 9.7 nC | 12 nC |
Minimum Operating Temperature | - 50 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.8 W | 1.8 W | 1.8 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 1.6 mm | 1.6 mm | 1.6 mm |
Length | 6.5 mm | 6.5 mm | 6.5 mm |
Series | BSP320 | BSP320 | BSP320 |
Transistor Type | 1 P-Channel | 1 N-Channel | 1 N-Channel |
Width | 3.5 mm | 3.5 mm | 3.5 mm |
Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Forward Transconductance Min | 2.5 S | 2.5 S | 2.5 S |
Fall Time | 35 ns | 35 ns | 35 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 25 ns | 25 ns | 25 ns |
Factory Pack Quantity | 4000 | 1000 | 1000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 25 ns | 25 ns | 25 ns |
Typical Turn On Delay Time | 11 ns | 11 ns | 11 ns |
Part # Aliases | BSP320S H6433 SP001058772 | BSP320SH6327XTSA1 SP001058768 | BSP320S H6327 SP001058768 |
Unit Weight | 0.003951 oz | 0.003951 oz | 0.003951 oz |