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| PartNumber | BSM250D17P2E004 | BSM252F | BSM254F |
| Description | Discrete Semiconductor Modules 1700V Vdss; 250A Id SiC Pwr Module | Power Field-Effect Transistor, 1-Element, Metal-oxide Semiconductor FET | |
| Manufacturer | ROHM Semiconductor | - | - |
| Product Category | Discrete Semiconductor Modules | - | - |
| RoHS | Y | - | - |
| Product | Power Semiconductor Modules | - | - |
| Type | Half Bridge Module | - | - |
| Vgs Gate Source Voltage | - 6 V, 22 V | - | - |
| Mounting Style | Screw Mount | - | - |
| Package / Case | Module | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BSMx | - | - |
| Packaging | Tray | - | - |
| Configuration | Half-Bridge | - | - |
| Brand | ROHM Semiconductor | - | - |
| Transistor Polarity | N-Channel | - | - |
| Typical Delay Time | 55 ns | - | - |
| Fall Time | 70 ns | - | - |
| Id Continuous Drain Current | 250 A | - | - |
| Pd Power Dissipation | 1800 W | - | - |
| Product Type | Discrete Semiconductor Modules | - | - |
| Rise Time | 55 ns | - | - |
| Factory Pack Quantity | 4 | - | - |
| Subcategory | Discrete Semiconductor Modules | - | - |
| Typical Turn Off Delay Time | 195 ns | - | - |
| Typical Turn On Delay Time | 55 ns | - | - |
| Vds Drain Source Breakdown Voltage | 1700 V | - | - |
| Vgs th Gate Source Threshold Voltage | 1.6 V | - | - |