BSM100GB120DLC vs BSM100GB100D vs BSM100GB120D

 
PartNumberBSM100GB120DLCBSM100GB100DBSM100GB120D
DescriptionIGBT Modules 1200V 100A DUAL
ManufacturerInfineon-SIEMENS
Product CategoryIGBT Modules-Module
RoHSN--
ProductIGBT Silicon Modules--
ConfigurationDual--
Collector Emitter Voltage VCEO Max1200 V--
Collector Emitter Saturation Voltage2.1 V--
Continuous Collector Current at 25 C200 A--
Gate Emitter Leakage Current400 nA--
Pd Power Dissipation780 W--
Package / Case62 mm--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 125 C--
PackagingTray--
Height30.5 mm--
Length106.4 mm--
Width61.4 mm--
BrandInfineon Technologies--
Mounting StyleChassis Mount--
Maximum Gate Emitter Voltage20 V--
Product TypeIGBT Modules--
Factory Pack Quantity10--
SubcategoryIGBTs--
Part # AliasesBSM100GB120DLCHOSA1 SP000100721--
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