BSD840NH6327XTSA1 vs BSD840N H6327 vs BSD840NH6327XT


PartNumber	BSD840NH6327XTSA1	BSD840N H6327	BSD840NH6327XT
Description	MOSFET N-Ch 20V 880mA SOT-363-6	MOSFET N-Ch 20V 880mA SOT-363-6	MOSFET N-Ch 20V 880mA SOT-363-6
Manufacturer	Infineon	Infineon	Infineon
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	Y
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	SOT-363-6	SOT-363-6	SOT-363-6
Number of Channels	2 Channel	2 Channel	2 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	20 V	20 V	20 V
Id Continuous Drain Current	880 mA	880 mA	880 mA
Rds On Drain Source Resistance	400 mOhms	270 mOhms, 270 mOhms	270 mOhms, 270 mOhms
Vgs th Gate Source Threshold Voltage	300 mV	300 mV	300 mV
Vgs Gate Source Voltage	2.5 V	8 V	8 V
Qg Gate Charge	0.26 nC	260 pC, 260 pC	260 pC, 260 pC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	500 mW	500 mW (1/2 W)	500 mW (1/2 W)
Configuration	Dual	Dual	Dual
Channel Mode	Enhancement	Enhancement	Enhancement
Qualification	AEC-Q101	AEC-Q101	AEC-Q101
Packaging	Reel	Reel	Reel
Height	0.9 mm	0.9 mm	0.9 mm
Length	2 mm	2 mm	2 mm
Series	BSD840	BSD840	BSD840
Transistor Type	2 N-Channel	2 N-Channel	2 N-Channel
Width	1.25 mm	1.25 mm	1.25 mm
Brand	Infineon Technologies	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	2.5 S	2.5 S, 2.5 S	2.5 S, 2.5 S
Fall Time	0.9 ns	900 ps, 900 ps	900 ps, 900 ps
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	2.2 ns	2.2 ns, 2.2 ns	2.2 ns, 2.2 ns
Factory Pack Quantity	3000	3000	3000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	7.8 ns	7.8 ns, 7.8 ns	7.8 ns, 7.8 ns
Typical Turn On Delay Time	1.9 ns	1.9 ns, 1.9 ns	1.9 ns, 1.9 ns
Part # Aliases	BSD840N BSD84NH6327XT H6327 SP000917654	BSD840NH6327XTSA1 BSD84NH6327XT SP000917654	BSD840NH6327XTSA1 SP000917654
Unit Weight	0.000265 oz	0.000265 oz	0.000265 oz