BSC0911ND vs BSC0910NDI vs BSC0910NDIATMA1


PartNumber	BSC0911ND	BSC0910NDI	BSC0910NDIATMA1
Description	MOSFET N-Ch 25V 40A TISON-8	MOSFET TRANSITIONAL MOSFETS	MOSFET LV POWER MOS
Manufacturer	Infineon	Infineon	Infineon
Product Category	MOSFET	MOSFET	MOSFET
RoHS	Y	Y	-
Technology	Si	Si	Si
Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT
Package / Case	TISON-8	PG-TISON-8	TISON-8
Number of Channels	2 Channel	2 Channel	2 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	25 V	25 V	25 V
Id Continuous Drain Current	40 A	40 A	40 A
Rds On Drain Source Resistance	2.5 mOhms, 900 uOhms	1.2 mOhms, 4.6 mOhms	3.5 mOhms, 900 uOhms
Vgs th Gate Source Threshold Voltage	1.2 V	1 V	1 V
Vgs Gate Source Voltage	20 V	10 V	20 V
Qg Gate Charge	12 nC, 37 nC	5 nC, 23 nC	6.6 nC, 30.6 nC
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 150 C	+ 150 C	+ 150 C
Pd Power Dissipation	2.5 W	2.5 W	2.5 W
Configuration	Dual	Dual	Dual
Channel Mode	Enhancement	Enhancement	Enhancement
Tradename	OptiMOS	OptiMOS	OptiMOS
Packaging	Reel	Reel	Reel
Height	1.27 mm	1.27 mm	1.27 mm
Length	5.9 mm	5.9 mm	5.9 mm
Transistor Type	2 N-Channel	2 N-Channel	2 N-Channel
Width	5.15 mm	5.15 mm	5.15 mm
Brand	Infineon Technologies	Infineon Technologies	Infineon Technologies
Forward Transconductance Min	38 S, 65 S	42 S, 85 S	42 S, 85 S
Fall Time	2.2 ns, 4 ns	2.4 ns, 4.1 ns	2.4 ns, 4.1 ns
Product Type	MOSFET	MOSFET	MOSFET
Rise Time	2.8 ns, 5.4 ns	3.6 ns, 5.6 ns	3.6 ns, 5.6 ns
Factory Pack Quantity	5000	5000	5000
Subcategory	MOSFETs	MOSFETs	MOSFETs
Typical Turn Off Delay Time	15 ns, 25 ns	13 ns, 28 ns	13 ns, 28 ns
Typical Turn On Delay Time	3.3 ns, 3.8 ns	2.4 ns, 5.6 ns	2.4 ns, 5.6 ns
Part # Aliases	BSC0911NDATMA1 BSC911NDXT SP000934746	BSC0910NDIATMA1 SP000998052	BSC0910NDI SP000998052
Unit Weight	-	0.003591 oz	-