BSC022N04LS vs BSC022N04LS6ATMA1 vs BSC022N04LSATM

 
PartNumberBSC022N04LSBSC022N04LS6ATMA1BSC022N04LSATM
DescriptionMOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3MOSFET
ManufacturerInfineonInfineonInfineon Technologies
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current100 A100 A-
Rds On Drain Source Resistance1.8 mOhms2.2 mOhms-
Vgs th Gate Source Threshold Voltage1.2 V1.3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge52 nC28 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 175 C-
Pd Power Dissipation69 W79 W-
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOS-OptiMOS
PackagingReelReelReel
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 5-OptiMOS 3
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width5.15 mm--
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min90 S170 S-
Fall Time5 ns4 ns-
Product TypeMOSFETMOSFET-
Rise Time6.8 ns2.1 ns-
Factory Pack Quantity50005000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time26 ns16 ns-
Typical Turn On Delay Time6.1 ns5 ns-
Part # AliasesBSC022N04LSATMA1 SP001059844--
Part Aliases--BSC022N04LS SP001059844
Package Case--TDSON-8
Id Continuous Drain Current--100 A
Vds Drain Source Breakdown Voltage--40 V
Rds On Drain Source Resistance--2.2 mOhms
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