BPX 80 vs BPX 81 vs BPX81(Q62702P43S2)

 
PartNumberBPX 80BPX 81BPX81(Q62702P43S2)
DescriptionPhototransistors PHOTOTRANSISTOROptical Sensors Phototransistors PHOTOTRANSISTOR
ManufacturerOsram Opto SemiconductorOSRAM Opto Semiconductors Inc.-
Product CategoryPhototransistorsOptical Sensors - Photodiodes-
RoHSY--
ProductPhototransistorsPhototransistors-
Package / CaseMiniature Array--
Mounting StyleThrough HoleThrough Hole-
Peak Wavelength850 nm--
Operating Supply Voltage---
Maximum On State Collector Current50 mA50 mA-
Collector Emitter Voltage VCEO Max35 V--
Collector Emitter Breakdown Voltage35 V35 V-
Collector Emitter Saturation Voltage150 mW150 mW-
Dark Current1 nA1 nA-
Rise Time6 us7 us-
Fall Time6 us7 us-
Pd Power Dissipation90 mW--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 80 C+ 80 C-
Height3.4 mm--
Length7.4 mm--
Lens Color/StyleTransparent--
Output Current---
TypeSilicon NPN Phototransistor ArraysSilicon NPN Phototransistor Arrays-
Wavelength850 nm850nm-
Width1.8 mm--
BrandOSRAM Opto Semiconductors--
Propagation Delay Max---
Half Intensity Angle Degrees18 deg--
Light Current320 uA250 uA-
Product TypePhototransistors--
Factory Pack Quantity100--
SubcategoryOptical Detectors and Sensors--
Part # AliasesQ62702P0028Q62702P0020-
Unit Weight0.007055 oz--
Series---
Packaging-Bulk-
Package Case-Single Digit Miniature Array-
Operating Temperature--40°C ~ 80°C (TA)-
Mounting Type-Through Hole-
Power Max-90mW-
Current Collector Ic Max-50mA-
Voltage Collector Emitter Breakdown Max-32V-
Orientation-Top View-
Current Dark Id Max-25nA-
Viewing Angle-36°-
Pd Power Dissipation-90 mW-
Collector Emitter Voltage VCEO Max-35 V-
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