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| PartNumber | BG 5130R E6327 | BG5130R | BG513OR E6327 |
| Description | RF MOSFET Transistors DUAL - N-Channel MOSFET Tetrode | ||
| Manufacturer | Infineon | - | - |
| Product Category | RF MOSFET Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Polarity | N-Channel | - | - |
| Technology | Si | - | - |
| Id Continuous Drain Current | 25 mA | - | - |
| Vds Drain Source Breakdown Voltage | 8 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-363 | - | - |
| Packaging | Reel | - | - |
| Configuration | Dual | - | - |
| Height | 0.9 mm | - | - |
| Length | 2 mm | - | - |
| Type | RF Small Signal MOSFET | - | - |
| Width | 1.25 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Pd Power Dissipation | 200 mW | - | - |
| Product Type | RF MOSFET Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Vgs Gate Source Voltage | 6 V | - | - |
| Unit Weight | 0.000212 oz | - | - |