PartNumber | BF998E6327HTSA1 | BF 998 E6327 | BF998E6327XT |
Description | RF MOSFET Transistors N-CH 12 V 30 mA | RF MOSFET Transistors N-CH 12 V 30 mA | |
Manufacturer | Infineon | Infineon | - |
Product Category | RF MOSFET Transistors | RF MOSFET Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | SOT-143-4 | SOT-143 | - |
Packaging | Reel | Reel | - |
Series | BF998 | BF998 | - |
Type | RF Small Signal MOSFET | RF Small Signal MOSFET | - |
Brand | Infineon Technologies | Infineon Technologies | - |
Product Type | RF MOSFET Transistors | RF MOSFET Transistors | - |
Factory Pack Quantity | 3000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Part # Aliases | 998 BF BF998E6327XT E6327 SP000010978 | BF998E6327HTSA1 BF998E6327XT SP000010978 | - |
Unit Weight | 0.000353 oz | 0.000353 oz | - |
Transistor Polarity | - | N-Channel | - |
Id Continuous Drain Current | - | 30 mA | - |
Vds Drain Source Breakdown Voltage | - | 12 V | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Mounting Style | - | SMD/SMT | - |
Configuration | - | Single Dual Gate | - |
Height | - | 1 mm | - |
Length | - | 2.9 mm | - |
Width | - | 1.3 mm | - |
Channel Mode | - | Enhancement | - |
Pd Power Dissipation | - | 200 mW | - |
Vgs Gate Source Voltage | - | 8 V to 12 V | - |