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| PartNumber | BCP56-16HX | BCP 56-16 H6327 | BCP56-16H |
| Description | Bipolar Transistors - BJT 80 V, 1 A NPN md power transistors | Bipolar Transistors - BJT AF TRANSISTOR | |
| Manufacturer | Nexperia | Infineon | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-223-3 | - | - |
| Transistor Polarity | NPN | NPN | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 80 V | - | - |
| Collector Base Voltage VCBO | 100 V | - | - |
| Emitter Base Voltage VEBO | 7 V | - | - |
| Collector Emitter Saturation Voltage | 500 mV | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 155 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Series | BCP56 | - | - |
| DC Current Gain hFE Max | 160 | - | - |
| Packaging | Reel | Reel | - |
| Brand | Nexperia | Infineon Technologies | - |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 63 | - | - |
| Pd Power Dissipation | 2.2 W | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 1000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | - | BCP5616H6327XT BCP5616H6327XTSA1 SP000748370 | - |