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| PartNumber | BCP51-10TF | BCP5110TA | BCP51-10T1G |
| Description | Bipolar Transistors - BJT BCP51T_SER - 45 V, 1 A PNP medium power transistors | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT223 T&R 1K | |
| Manufacturer | Nexperia | Diodes Incorporated | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SC-73-4 | SOT-223-4 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | - 45 V | 45 V | - |
| Collector Base Voltage VCBO | - 45 V | 45 V | - |
| Emitter Base Voltage VEBO | - 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | - 500 mV | - | - |
| Maximum DC Collector Current | - 2 A | 1 A | - |
| Gain Bandwidth Product fT | 140 MHz | 125 MHz | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 160 | 63 | - |
| Packaging | Reel | Reel | - |
| Brand | Nexperia | Diodes Incorporated | - |
| Continuous Collector Current | - 1 A | - | - |
| DC Collector/Base Gain hfe Min | 63 | 63 at 150 mA, 2 V | - |
| Pd Power Dissipation | 0.6 W | 2000 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 4000 | 1000 | - |
| Subcategory | Transistors | Transistors | - |
| Series | - | BCP51 | - |
| Height | - | 1.65 mm | - |
| Length | - | 6.7 mm | - |
| Width | - | 3.7 mm | - |
| Unit Weight | - | 0.003951 oz | - |