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| PartNumber | BC859C,215 | BC 859C E6327 | BC859-C |
| Description | Bipolar Transistors - BJT TRANS GP TAPE-7 | Bipolar Transistors - BJT Trans GP BJT PNP 30V 0.1A 3-Pin | Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
| Manufacturer | Nexperia | Infineon | - |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Single | Single | - |
| Collector Emitter Voltage VCEO Max | 30 V | 30 V | - |
| Collector Base Voltage VCBO | 30 V | 30 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Maximum DC Collector Current | 0.1 A | 0.1 A | - |
| Gain Bandwidth Product fT | 100 MHz | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| DC Current Gain hFE Max | 420 at 2 mA, 5 V | - | - |
| Height | 1 mm | 1 mm | - |
| Length | 3 mm | 2.9 mm | - |
| Packaging | Reel | Reel | - |
| Width | 1.4 mm | 1.3 mm | - |
| Brand | Nexperia | Infineon Technologies | - |
| DC Collector/Base Gain hfe Min | 420 at 2 mA, 5 V | - | - |
| Pd Power Dissipation | 250 mW | 330 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BC859C T/R | BC859CE6327HTSA1 BC859CE6327XT SP000010637 | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Collector Emitter Saturation Voltage | - | 650 mV | - |
| Series | - | BC859 | - |
| Continuous Collector Current | - | 0.1 A | - |