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| PartNumber | BC 857A E6327 | BC857A RF | BC857A |
| Description | Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR | Bipolar Transistors - BJT Transistor 200mW | Bipolar Transistors - BJT SOT-23 PNP GP AMP |
| Manufacturer | Infineon | Taiwan Semiconductor | NXP |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Single |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 45 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 250 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BC857 | - | - |
| Height | 1 mm | - | - |
| Length | 2.9 mm | - | - |
| Packaging | Reel | Reel | - |
| Width | 1.3 mm | - | - |
| Brand | Infineon Technologies | Taiwan Semiconductor | - |
| Continuous Collector Current | 0.1 A | - | - |
| Pd Power Dissipation | 330 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | BC857AE6327HTSA1 BC857AE6327XT SP000010639 | - | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |