BC817-40QAZ vs BC817-40QA vs BC817-40QA147

 
PartNumberBC817-40QAZBC817-40QABC817-40QA147
DescriptionBipolar Transistors - BJT 45V 500mA NPN GP Transistors- Bulk (Alt: BC817-40QA147)
ManufacturerNexperiaNXP Semiconductors-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single, Pre-Biased-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseDFN-1010D-3--
Transistor PolarityNPNNPN-
Collector Emitter Voltage VCEO Max45 V--
Collector Base Voltage VCBO50 V--
Emitter Base Voltage VEBO5 V--
Collector Emitter Saturation Voltage700 mV700 mV-
Maximum DC Collector Current500 mA500 mA-
Gain Bandwidth Product fT100 MHz100 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesBC817Automotive, AEC-Q101-
DC Current Gain hFE Max600 mA600 mA-
PackagingReelDigi-ReelR Alternate Packaging-
BrandNexperia--
Continuous Collector Current500 mA500 mA-
DC Collector/Base Gain hfe Min250--
Pd Power Dissipation900 mW--
Product TypeBJTs - Bipolar Transistors--
QualificationAEC-Q101--
Factory Pack Quantity5000--
SubcategoryTransistors--
Unit Weight0.000041 oz--
Package Case-3-XDFN Exposed Pad-
Mounting Type-Surface Mount-
Supplier Device Package-DFN1010D-3-
Power Max-900mW-
Transistor Type-NPN-
Current Collector Ic Max-500mA-
Voltage Collector Emitter Breakdown Max-45V-
DC Current Gain hFE Min Ic Vce-40 @ 500mA, 1V-
Vce Saturation Max Ib Ic-700mV @ 50mA, 500mA-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-100MHz-
Pd Power Dissipation-900 mW-
Collector Emitter Voltage VCEO Max-45 V-
Collector Base Voltage VCBO-50 V-
Emitter Base Voltage VEBO-5 V-
DC Collector Base Gain hfe Min-250-
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