BC33716BU vs BC337-16 A1 vs BC33716

 
PartNumberBC33716BUBC337-16 A1BC33716
DescriptionBipolar Transistors - BJT NPN 45V 800mA HFE/250Bipolar Transistors - BJT NPN TransistorBipolar Transistors - BJT NPN 45V 800mA HFE/250
ManufacturerON SemiconductorTaiwan SemiconductorON Semiconductor
Product CategoryBipolar Transistors - BJTBipolar Transistors - BJTBipolar Transistors - BJT
RoHSYYY
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-92-3TO-92-3TO-92-3
Transistor PolarityNPN-NPN
ConfigurationSingle-Single
Collector Emitter Voltage VCEO Max45 V-45 V
Emitter Base Voltage VEBO5 V-5 V
Collector Emitter Saturation Voltage0.7 V--
Maximum DC Collector Current0.8 A-0.8 A
Gain Bandwidth Product fT100 MHz-100 MHz
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
SeriesBC337BC33xBC337
DC Current Gain hFE Max630--
Height4.7 mm-4.58 mm
Length4.7 mm-4.58 mm
PackagingBulkAmmo PackBulk
Width3.93 mm-3.86 mm
BrandON Semiconductor / FairchildTaiwan SemiconductorON Semiconductor / Fairchild
Continuous Collector Current0.8 A-0.8 A
Pd Power Dissipation625 mW-625 mW
Product TypeBJTs - Bipolar TransistorsBJTs - Bipolar TransistorsBJTs - Bipolar Transistors
Factory Pack Quantity1000040002000
SubcategoryTransistorsTransistorsTransistors
Unit Weight0.006314 oz0.016000 oz0.007055 oz
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