AUIRLR120NTRL vs AUIRLR120N vs AUIRLR120NTR

 
PartNumberAUIRLR120NTRLAUIRLR120NAUIRLR120NTR
DescriptionMOSFET AUTO 100V 1 N-CH HEXFET 185mOhmsMOSFET AUTO 100V 1 N-CH HEXFET 185mOhmsMOSFET AUTO 100V 1 N-CH HEXFET 185mOhms
ManufacturerInfineonInfineonInternational Rectifier
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V100 V-
Id Continuous Drain Current10 A10 A-
Rds On Drain Source Resistance185 mOhms185 mOhms-
Vgs Gate Source Voltage16 V16 V-
Qg Gate Charge13.3 nC13.3 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Pd Power Dissipation48 W48 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101AEC-Q101-
PackagingReelTubeReel
Height2.3 mm2.3 mm-
Length6.5 mm6.5 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm6.22 mm-
BrandInfineon / IRInfineon / IR-
Fall Time22 ns22 ns22 ns
Product TypeMOSFETMOSFET-
Rise Time35 ns35 ns35 ns
Factory Pack Quantity30003000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time23 ns23 ns23 ns
Typical Turn On Delay Time4 ns4 ns4 ns
Part # AliasesSP001516016SP001521880-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--48 W
Vgs Gate Source Voltage--16 V
Id Continuous Drain Current--10 A
Vds Drain Source Breakdown Voltage--100 V
Rds On Drain Source Resistance--185 mOhms
Qg Gate Charge--13.3 nC
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