AUIRLR024N vs AUIRLR024NPBF vs AUIRLR024NTR

 
PartNumberAUIRLR024NAUIRLR024NPBFAUIRLR024NTR
DescriptionMOSFET AUTO 55V 1 N-CH HEXFET 65mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 65mOhms
ManufacturerInfineonIRInternational Rectifier
Product CategoryMOSFETIC ChipsTransistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-252-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current17 A--
Rds On Drain Source Resistance65 mOhms--
Vgs Gate Source Voltage16 V--
Qg Gate Charge10 nC--
Minimum Operating Temperature- 55 C-- 55 C
Pd Power Dissipation45 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101--
PackagingTube-Reel
Height2.3 mm--
Length6.5 mm--
Transistor Type1 N-Channel-1 N-Channel
Width6.22 mm--
BrandInfineon Technologies--
Fall Time29 ns-29 ns
Product TypeMOSFET--
Rise Time74 ns-74 ns
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns-20 ns
Typical Turn On Delay Time7.1 ns-7.1 ns
Part # AliasesSP001523060--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--45 W
Vgs Gate Source Voltage--16 V
Id Continuous Drain Current--17 A
Vds Drain Source Breakdown Voltage--55 V
Rds On Drain Source Resistance--65 mOhms
Qg Gate Charge--10 nC
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