AUIRF1010ZSTRL vs AUIRF1010ZS vs AUIRF1010ZSTRR

 
PartNumberAUIRF1010ZSTRLAUIRF1010ZSAUIRF1010ZSTRR
DescriptionMOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhmsMOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhmsAUTOMOTIVE MOSFET 55V, 94A, 7.5 MOHM, 63 NC QG, D2PAK
ManufacturerInfineonInfineonInternational Rectifier
Product CategoryMOSFETMOSFETTransistors - FETs, MOSFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V55 V-
Id Continuous Drain Current44 A94 A-
Rds On Drain Source Resistance7.5 mOhms7.5 mOhms-
Vgs Gate Source Voltage20 V20 V-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation140 W140 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101AEC-Q101-
PackagingReelTubeReel
Height4.4 mm4.4 mm-
Length10 mm10 mm-
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width9.25 mm9.25 mm-
BrandInfineon TechnologiesInfineon Technologies-
Fall Time92 ns92 ns92 ns
Product TypeMOSFETMOSFET-
Rise Time150 ns150 ns150 ns
Factory Pack Quantity8001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time36 ns36 ns36 ns
Typical Turn On Delay Time18 ns18 ns18 ns
Part # AliasesSP001519002SP001519530-
Unit Weight0.139332 oz0.139332 oz0.139332 oz
Qg Gate Charge-63 nC-
Package Case--TO-252-3
Pd Power Dissipation--140 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--44 A
Vds Drain Source Breakdown Voltage--55 V
Rds On Drain Source Resistance--7.5 mOhms
Top