AUIRF1010EZSTRL vs AUIRF1010EZSTRLPBF vs AUIRF1010EZSTRR

 
PartNumberAUIRF1010EZSTRLAUIRF1010EZSTRLPBFAUIRF1010EZSTRR
DescriptionMOSFET AUTO 60V 1 N-CH HEXFET 8.5mOhmsAUTOMOTIVE MOSFET 60V, 84A, 8.5 MOHM, 58 NC QG, D2PAK
ManufacturerInfineon-International Rectifier
Product CategoryMOSFET-Transistors - FETs, MOSFETs - Single
RoHSY--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseTO-263-3--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current44 A--
Rds On Drain Source Resistance8.5 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 175 C-+ 175 C
Pd Power Dissipation140 W--
ConfigurationSingle-Single
Channel ModeEnhancement-Enhancement
QualificationAEC-Q101--
PackagingReel-Reel
Height4.4 mm--
Length10 mm--
Transistor Type1 N-Channel-1 N-Channel
Width9.25 mm--
BrandInfineon Technologies--
Fall Time54 ns-54 ns
Product TypeMOSFET--
Rise Time90 ns-90 ns
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38 ns-38 ns
Typical Turn On Delay Time19 ns-19 ns
Part # AliasesSP001520896--
Unit Weight0.139332 oz-0.139332 oz
Package Case--TO-252-3
Pd Power Dissipation--140 W
Vgs Gate Source Voltage--20 V
Id Continuous Drain Current--44 A
Vds Drain Source Breakdown Voltage--60 V
Rds On Drain Source Resistance--8.5 mOhms
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