PartNumber | ATF-58143-TR1G | ATF-58143-TR1 | ATF-58143-TR1GG |
Description | RF JFET Transistors Transistor GaAs Single Voltage | ||
Manufacturer | Broadcom Limited | - | |
Product Category | RF JFET Transistors | RF FETs | - |
RoHS | Y | - | - |
Transistor Type | EpHEMT | EpHEMT | - |
Technology | GaAs | GaAs | - |
Gain | 16.5 dB | 16.5 dB | - |
Vds Drain Source Breakdown Voltage | 5 V | - | - |
Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - | - |
Id Continuous Drain Current | 100 mA | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 500 mW (1/2 W) | - | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-343 | - | - |
Packaging | Reel | Reel | - |
Configuration | Single Dual Source | Single Dual Source | - |
Operating Frequency | 2 GHz | 2 GHz | - |
Product | RF JFET | - | - |
Type | GaAs EpHEMT | - | - |
Brand | Broadcom / Avago | - | - |
Forward Transconductance Min | 410 mmho | - | - |
NF Noise Figure | 0.5 dB | - | - |
P1dB Compression Point | 19 dBm | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | Transistors | - | - |
Package Case | - | SOT-343 | - |
Pd Power Dissipation | - | 500 mW | - |
Id Continuous Drain Current | - | 100 mA | - |
Vds Drain Source Breakdown Voltage | - | 5 V | - |
Forward Transconductance Min | - | 410 mmho | - |
Vgs Gate Source Breakdown Voltage | - | - 5 V to 1 V | - |
NF Noise Figure | - | 0.5 dB | - |
P1dB Compression Point | - | 19 dBm | - |