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| PartNumber | ATF-531P8-TR1 | ATF-531P8-BLK | ATF-531P8-TR1G |
| Description | RF JFET Transistors Transistor GaAs High Linearity | RF JFET Transistors Transistor GaAs High Linearity | |
| Manufacturer | AVAGO | Broadcom / Avago | AVAGO |
| Product Category | RF FETs | Transistors - FETs, MOSFETs - Single | IC Chips |
| Packaging | Reel | Bulk | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package Case | LPCC-8 | LPCC-8 | - |
| Technology | GaAs | GaAs | - |
| Configuration | Single Dual Source | Single Dual Source | - |
| Transistor Type | EpHEMT | EpHEMT | - |
| Gain | 20 dB | 20 dB | - |
| Pd Power Dissipation | 1 W | 1 W | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Operating Frequency | 2 GHz | 2 GHz | - |
| Id Continuous Drain Current | 300 mA | 300 mA | - |
| Vds Drain Source Breakdown Voltage | 7 V | 7 V | - |
| Forward Transconductance Min | 650 mmho | 650 mmho | - |
| Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - 5 V to 1 V | - |
| NF Noise Figure | 0.6 dB | 0.6 dB | - |
| P1dB Compression Point | 24.5 dBm | 24.5 dBm | - |