ATF-331M4-TR1 vs ATF-331M4-BLK vs ATF-331M4-TR1G

 
PartNumberATF-331M4-TR1ATF-331M4-BLKATF-331M4-TR1G
DescriptionRF JFET Transistors Transistor GaAs Low NoiseRF JFET Transistors Transistor GaAs Low Noise
ManufacturerBroadcom LimitedBroadcom / Avago-
Product CategoryRF JFET TransistorsTransistors - FETs, MOSFETs - Single-
RoHSY--
Transistor TypepHEMTpHEMT-
TechnologyGaAsGaAs-
Gain15 dB15 dB-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage5.5 V--
Vgs Gate Source Breakdown Voltage- 5 V--
Id Continuous Drain Current305 mA--
Maximum Drain Gate Voltage- 5 V- 5 V-
Minimum Operating Temperature- 65 C- 65 C-
Maximum Operating Temperature+ 160 C+ 160 C-
Pd Power Dissipation400 mW--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseMini PAK--
PackagingReelBulk-
ConfigurationSingle Dual SourceSingle Dual Source-
Height0.7 mm--
Length1.44 mm--
Operating Frequency2 GHz2 GHz-
ProductRF JFET--
TypeGaAs pHEMT--
Width1.2 mm--
BrandBroadcom / Avago--
Forward Transconductance Min440 mmho--
NF Noise Figure0.6 dB--
P1dB Compression Point19 dBm--
Product TypeRF JFET Transistors--
Factory Pack Quantity3000--
SubcategoryTransistors--
Package Case-Mini PAK-
Pd Power Dissipation-400 mW-
Id Continuous Drain Current-305 mA-
Vds Drain Source Breakdown Voltage-5.5 V-
Forward Transconductance Min-440 mmho-
Vgs Gate Source Breakdown Voltage-- 5 V-
NF Noise Figure-0.6 dB-
P1dB Compression Point-19 dBm-
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