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| PartNumber | ATF-33143-TR1G | ATF-33143-TR1 | ATF-33143-TR1GG |
| Description | RF JFET Transistors Transistor GaAs Low Noise | ||
| Manufacturer | Broadcom Limited | GP/AVAGO | - |
| Product Category | RF JFET Transistors | RF FETs | - |
| RoHS | Y | - | - |
| Transistor Type | pHEMT | - | - |
| Technology | GaAs | - | - |
| Gain | 15 dB | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 5.5 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 5 V | - | - |
| Id Continuous Drain Current | 305 mA | - | - |
| Maximum Operating Temperature | + 160 C | - | - |
| Pd Power Dissipation | 600 mW | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-343 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single Dual Source | - | - |
| Operating Frequency | 2 GHz | - | - |
| Product | RF JFET | - | - |
| Type | GaAs pHEMT | - | - |
| Brand | Broadcom / Avago | - | - |
| Forward Transconductance Min | 440 mmho | - | - |
| NF Noise Figure | 0.5 dB | - | - |
| P1dB Compression Point | 22 dBm | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |