PartNumber | ATF-33143-BLKG | ATF-33143-BLK | ATF-33143-TR1 |
Description | RF JFET Transistors Transistor GaAs Low Noise | ||
Manufacturer | Broadcom Limited | AVAGO | GP/AVAGO |
Product Category | RF JFET Transistors | RF FETs | RF FETs |
RoHS | Y | - | - |
Transistor Type | pHEMT | - | - |
Technology | GaAs | - | - |
Gain | 15 dB | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 5.5 V | - | - |
Vgs Gate Source Breakdown Voltage | - 5 V | - | - |
Id Continuous Drain Current | 305 mA | - | - |
Maximum Operating Temperature | + 160 C | - | - |
Pd Power Dissipation | 600 mW | - | - |
Mounting Style | SMD/SMT | - | - |
Package / Case | SOT-343 | - | - |
Packaging | Bulk | - | - |
Configuration | Single Dual Source | - | - |
Operating Frequency | 2 GHz | - | - |
Product | RF JFET | - | - |
Type | GaAs pHEMT | - | - |
Brand | Broadcom / Avago | - | - |
Forward Transconductance Min | 440 mmho | - | - |
NF Noise Figure | 0.5 dB | - | - |
P1dB Compression Point | 22 dBm | - | - |
Product Type | RF JFET Transistors | - | - |
Factory Pack Quantity | 100 | - | - |
Subcategory | Transistors | - | - |
Unit Weight | 0.016014 oz | - | - |