PartNumber | AS6C6416-55TIN | AS6C6416-55BIN | AS6C6416-55BINTR |
Description | SRAM 64M 3V 55ns Low Power 4048k x 16 | SRAM 64M 3V 4048k x 16 LP Asynch SRAM IT | SRAM 64M 3V 4048k x 16 LP Asynch SRAM IT |
Manufacturer | Alliance Memory | Alliance Memory | Alliance Memory |
Product Category | SRAM | SRAM | SRAM |
RoHS | Y | Y | Y |
Memory Size | 64 Mbit | 64 Mbit | 64 Mbit |
Organization | 4 M x 16 | 4 M x 16 | 4 M x 16 |
Access Time | 55 ns | 55 ns | 55 ns |
Interface Type | Parallel | Parallel | Parallel |
Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
Supply Voltage Min | 2.7 V | 2.7 V | 2.7 V |
Supply Current Max | 20 mA | 20 mA | 20 mA |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSOP-48 | FBGA-48 | FBGA-48 |
Packaging | Tray | Tray | Reel |
Memory Type | Volatile | - | - |
Series | AS6C6416-55 | AS6C6416-55 | AS6C6416-55 |
Type | Low Power CMOS | Asynchronous | Asynchronous |
Brand | Alliance Memory | Alliance Memory | Alliance Memory |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | SRAM | SRAM | SRAM |
Factory Pack Quantity | 96 | 220 | 2000 |
Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |