APTGT75A120T1G vs APTGT750U60D4G vs APTGT75A1202G

 
PartNumberAPTGT75A120T1GAPTGT750U60D4GAPTGT75A1202G
DescriptionIGBT Modules DOR CC8010IGBT Modules CC7093IGBT Modules Power Module - IGBT
ManufacturerMicrochipMicrochipMicrochip
Product CategoryIGBT ModulesIGBT ModulesIGBT Modules
RoHSYYY
ProductIGBT Silicon ModulesIGBT Silicon ModulesIGBT Silicon Modules
ConfigurationDualSingleDual
Collector Emitter Voltage VCEO Max1.2 kV600 V1.2 kV
Collector Emitter Saturation Voltage1.7 V1.5 V1.7 V
Continuous Collector Current at 25 C110 A1 kA110 A
Gate Emitter Leakage Current400 nA3.1 uA400 nA
Pd Power Dissipation357 W2.3 kW357 W
Package / CaseSP1-12D4-5SP2-18
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 100 C+ 125 C+ 100 C
PackagingTubeBulk-
BrandMicrochip / MicrosemiMicrochip / MicrosemiMicrochip / Microsemi
Mounting StyleChassis MountChassis MountChassis Mount
Maximum Gate Emitter Voltage20 V20 V20 V
Product TypeIGBT ModulesIGBT ModulesIGBT Modules
Factory Pack Quantity111
SubcategoryIGBTsIGBTsIGBTs
Unit Weight2.821917 oz12.345887 oz2.821917 oz
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