PartNumber | APTGT50H60T3G | APTGT50H60T1G | APTGT50H60RT3G |
Description | IGBT Modules CC3041 | IGBT Modules DOR CC8040 | IGBT Modules DOR CC3126 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Full Bridge | Full Bridge | Full Bridge |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
Collector Emitter Saturation Voltage | 1.5 V | 1.5 V | 1.5 V |
Continuous Collector Current at 25 C | 80 A | 80 A | 80 A |
Gate Emitter Leakage Current | 600 nA | 600 nA | 600 nA |
Pd Power Dissipation | 176 W | 176 W | 176 W |
Package / Case | SP3-32 | SP1-12 | SP3-32 |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | - | 2.821917 oz | - |