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| PartNumber | APTGT50DDA120T3G | APTGT50DA120TG | APTGT50DA170TG |
| Description | IGBT Modules CC3089 | IGBT Modules DOR CC4132 | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Dual | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 1.2 kV | 1.7 kV |
| Collector Emitter Saturation Voltage | 1.7 V | 1.7 V | 2 V |
| Continuous Collector Current at 25 C | 75 A | 75 A | 75 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
| Pd Power Dissipation | 270 W | 277 W | 312 W |
| Package / Case | SP3F-32 | SP4 | SP4 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 125 C | + 100 C | + 100 C |
| Packaging | Tube | Tube | - |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 1 | 1 | 1 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 3.880136 oz | 3.880136 oz | 3.880136 oz |
| Technology | - | - | Si |