PartNumber | APTGLQ50H65T3G | APTGLQ50DDA65T3G | APTGLQ50H65T1G |
Description | IGBT Modules DOR CC3211 | IGBT Modules DOR CC3213 | IGBT Modules CC8128 |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
Technology | - | - | - |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Quad | Dual | Quad |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | 650 V |
Collector Emitter Saturation Voltage | 1.85 V | 1.85 V | 1.85 V |
Continuous Collector Current at 25 C | 70 A | 70 A | 70 A |
Gate Emitter Leakage Current | 150 nA | 150 nA | 150 nA |
Pd Power Dissipation | 175 W | 175 W | 175 W |
Package / Case | SP3F | SP3F | SP1 |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 125 C | + 125 C | + 125 C |
Packaging | Tube | Tube | Tube |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 1 | 1 | 1 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 3.880136 oz | 3.880136 oz | 2.821917 oz |