PartNumber | APTGF90DA60T1G | APTGF90DU60TG | APTGF90DH60T3G |
Description | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
Manufacturer | Microchip | Microchip | Microchip |
Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
RoHS | Y | Y | Y |
Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
Configuration | Single | Dual | Dual |
Collector Emitter Voltage VCEO Max | 600 V | 600 V | 600 V |
Collector Emitter Saturation Voltage | 2 V | 2 V | 2 V |
Continuous Collector Current at 25 C | 110 A | 110 A | 110 A |
Gate Emitter Leakage Current | 150 nA | 150 nA | 400 nA |
Pd Power Dissipation | 416 W | 416 W | 416 W |
Package / Case | SP1-12 | SP4 | SP3-32 |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 100 C | + 100 C | + 100 C |
Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
Factory Pack Quantity | 50 | 50 | 50 |
Subcategory | IGBTs | IGBTs | IGBTs |
Unit Weight | 2.821917 oz | 3.880136 oz | - |
Technology | - | - | Si |