APTGF90DA60T1G vs APTGF90DH60T3G vs APTGF90A60T1G

 
PartNumberAPTGF90DA60T1GAPTGF90DH60T3GAPTGF90A60T1G
DescriptionIGBT Modules Power Module - IGBTIGBT Modules Power Module - IGBTPOWER MOD IGBT NPT PHASE LEG SP1
ManufacturerMicrochipMicrochip-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationSingleDual-
Collector Emitter Voltage VCEO Max600 V600 V-
Collector Emitter Saturation Voltage2 V2 V-
Continuous Collector Current at 25 C110 A110 A-
Gate Emitter Leakage Current150 nA400 nA-
Pd Power Dissipation416 W416 W-
Package / CaseSP1-12SP3-32-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 100 C+ 100 C-
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity5050-
SubcategoryIGBTsIGBTs-
Unit Weight2.821917 oz--
Technology-Si-
Top