 | |  | |
| PartNumber | APTGF50H60T2G | APTGF50H60T1G | APTGF50H60T3G |
| Description | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT | IGBT Modules |
| Manufacturer | Microchip | Microchip | Microsemi Corporation |
| Product Category | IGBT Modules | IGBT Modules | IGBTs - Modules |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Full Bridge | Full Bridge | Full Bridge Inverter |
| Collector Emitter Voltage VCEO Max | 600 V | 600 V | - |
| Collector Emitter Saturation Voltage | 2 V | 2 V | 2.1 V |
| Continuous Collector Current at 25 C | 65 A | 65 A | 65 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
| Pd Power Dissipation | 250 W | 250 W | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 100 C | + 150 C |
| Brand | Microchip / Microsemi | Microchip / Microsemi | - |
| Mounting Style | Chassis Mount | Chassis Mount | Screw |
| Maximum Gate Emitter Voltage | 20 V | 20 V | +/- 20 V |
| Product Type | IGBT Modules | IGBT Modules | - |
| Factory Pack Quantity | 50 | 50 | - |
| Subcategory | IGBTs | IGBTs | - |
| Package / Case | - | SP1-12 | - |
| Technology | - | Si | - |
| Unit Weight | - | 2.821917 oz | - |
| Series | - | - | - |
| Package Case | - | - | SP3 |
| Mounting Type | - | - | Chassis Mount |
| Supplier Device Package | - | - | SP3 |
| Input | - | - | Standard |
| Power Max | - | - | 250W |
| Current Collector Ic Max | - | - | 65A |
| Voltage Collector Emitter Breakdown Max | - | - | 600V |
| Current Collector Cutoff Max | - | - | 250μA |
| IGBT Type | - | - | NPT |
| Vce on Max Vge Ic | - | - | 2.45V @ 15V, 50A |
| Input Capacitance Cies Vce | - | - | 2.2nF @ 25V |
| NTC Thermistor | - | - | Yes |
| Pd Power Dissipation | - | - | 250 W |
| Collector Emitter Voltage VCEO Max | - | - | 600 V |