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| PartNumber | APTGF25H120T1G | APTGF250A60D3G | APTGF250SK60D3G |
| Description | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT | IGBT Modules Power Module - IGBT |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | IGBT Modules | IGBT Modules | IGBT Modules |
| RoHS | Y | Y | Y |
| Product | IGBT Silicon Modules | IGBT Silicon Modules | IGBT Silicon Modules |
| Configuration | Full Bridge | Dual | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | 600 V |
| Collector Emitter Saturation Voltage | 3.2 V | 1.95 V | 1.95 V |
| Continuous Collector Current at 25 C | 40 A | 400 A | 400 A |
| Gate Emitter Leakage Current | 400 nA | 400 nA | 400 nA |
| Pd Power Dissipation | 208 W | 1.25 kW | 1.25 kW |
| Package / Case | SP1-12 | D3-11 | D3-11 |
| Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
| Maximum Operating Temperature | + 100 C | + 125 C | + 125 C |
| Brand | Microchip / Microsemi | Microchip / Microsemi | Microchip / Microsemi |
| Mounting Style | Chassis Mount | Chassis Mount | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Product Type | IGBT Modules | IGBT Modules | IGBT Modules |
| Factory Pack Quantity | 50 | 50 | 50 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| Unit Weight | 2.821917 oz | - | - |
| Technology | - | - | Si |