APT50GF120B2RG vs APT50G60BDQ2G vs APT50GF120B2R

 
PartNumberAPT50GF120B2RGAPT50G60BDQ2GAPT50GF120B2R
DescriptionIGBT Modules FG, IGBT, 1200V, TO-247 T-MAX, RoHS
ManufacturerMicrochip--
Product CategoryIGBT Modules--
RoHSY--
ProductIGBT Silicon Carbide Modules--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max1.2 kV--
Collector Emitter Saturation Voltage2.5 V--
Continuous Collector Current at 25 C135 A--
Gate Emitter Leakage Current100 nA--
Pd Power Dissipation781 W--
Package / CaseT-Max-3--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTube--
BrandMicrochip / Microsemi--
Mounting StyleThrough Hole--
Maximum Gate Emitter Voltage30 V--
Product TypeIGBT Modules--
Factory Pack Quantity1--
SubcategoryIGBTs--
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