APT45GR65B vs APT45GR65B2DU30 vs APT45GR65BSCD10

 
PartNumberAPT45GR65BAPT45GR65B2DU30APT45GR65BSCD10
DescriptionIGBT Transistors FG, IGBT, 650V, 45A, TO-247IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
ManufacturerMicrochipMicrochip-
Product CategoryIGBT TransistorsIGBT Transistors-
RoHSYY-
TechnologySiSi-
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max650 V--
Collector Emitter Saturation Voltage1.9 V--
Maximum Gate Emitter Voltage30 V--
Continuous Collector Current at 25 C118 A--
Pd Power Dissipation543 W--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
PackagingTubeTube-
Continuous Collector Current Ic Max118 A--
Height5.31 mm--
Length21.46 mm--
Operating Temperature Range- 55 C to + 150 C--
Width16.26 mm--
BrandMicrochip / MicrosemiMicrochip / Microsemi-
Continuous Collector Current118 A--
Gate Emitter Leakage Current250 nA--
Product TypeIGBT TransistorsIGBT Transistors-
Factory Pack Quantity11-
SubcategoryIGBTsIGBTs-
TradenameUltra Fast NPT-IGBT--
Unit Weight1.340411 oz--
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