PartNumber | APT45GR65B | APT45GR65B2DU30 | APT45GR65BSCD10 |
Description | IGBT Transistors FG, IGBT, 650V, 45A, TO-247 | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 | IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8 |
Manufacturer | Microchip | Microchip | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-247-3 | - | - |
Mounting Style | Through Hole | - | - |
Configuration | Single | - | - |
Collector Emitter Voltage VCEO Max | 650 V | - | - |
Collector Emitter Saturation Voltage | 1.9 V | - | - |
Maximum Gate Emitter Voltage | 30 V | - | - |
Continuous Collector Current at 25 C | 118 A | - | - |
Pd Power Dissipation | 543 W | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Packaging | Tube | Tube | - |
Continuous Collector Current Ic Max | 118 A | - | - |
Height | 5.31 mm | - | - |
Length | 21.46 mm | - | - |
Operating Temperature Range | - 55 C to + 150 C | - | - |
Width | 16.26 mm | - | - |
Brand | Microchip / Microsemi | Microchip / Microsemi | - |
Continuous Collector Current | 118 A | - | - |
Gate Emitter Leakage Current | 250 nA | - | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 1 | 1 | - |
Subcategory | IGBTs | IGBTs | - |
Tradename | Ultra Fast NPT-IGBT | - | - |
Unit Weight | 1.340411 oz | - | - |